단전자 트랜지스터(single-electron transistor) 제조

단전자 트랜지스터(single-electron transistor) 제조

단전자 트랜지스터(single-electron transistor) 제조.pptx

목차 1. Advantage of SET 2. Vapor-Liquid-Solid growth 3. Template based electrode 4. Fabrication of SET 5. GaAs quantum dot SET 본문 Advantage of SET 1. I-V relation 2. Extra small size of application device 3. Very low driving voltage 4. Short switching time 5. Better sensing device Vapor-liquid-solid growth Direct Observation of Vapor-Liquid-Solid Nanowire Growth (J. Am. Chem. Soc. 2001, 123, 3165-3166) Template-based electrode Au soucre & drain electrode using templating mechanism Shadow mask evaporation : two metal depositions followed by an oxidation and a further metal deposition from a different angle form an overlap of two stripes Why GaAs quantum dot ? Proper quantum dot size enough to be placed between source and drain by using templates-based technique 2) Band gap of GaAs (1.42eV~1.52eV) higher than basic thermal energy (0.0259eV) 3) GaAs quantum dot has Coulomb blockade 참고문헌 1. Single Electron Transistor mediated by a Single Quantum-dot (Kyung Guk Ryu , Pohang University of Science and Technology ) 2. Direct Observation of Vapor-Liquid-Solid Nanowire Growth (J. Am. Chem. Soc. 2001, 123, 3165-3166) 3. Single-Electron Tunneling Through a Heavily Doped GaAs Quantum Dot (Kyung Guk Ryu , Pohang University of Science and Technology ) 4. Wikipedia: Free-encyclopedia, http://www.wikipedia.org 5. Google search, http://www.google.co.kr 키워드 단전자, 제조, 트랜지스터